Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,018
Each (In a Pack of 5) (ex VAT)
5
€ 1,018
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 1,018 | € 5,09 |
25 - 95 | € 0,897 | € 4,48 |
100 - 245 | € 0,782 | € 3,91 |
250 - 495 | € 0,731 | € 3,65 |
500+ | € 0,691 | € 3,46 |
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Детайли за продукта