N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A

Номер на артикул на RS: 827-4883Марка: Texas Instruments№ по каталога на производителя: CSD18504Q5A
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,886

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Изберете тип опаковка

€ 0,886

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 20€ 0,886€ 4,43
25 - 45€ 0,842€ 4,21
50 - 120€ 0,76€ 3,80
125 - 245€ 0,681€ 3,40
250+€ 0,65€ 3,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more