Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 14,00
€ 2,80 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 14,00
€ 2,80 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 2,80 | € 14,00 |
| 25 - 45 | € 2,656 | € 13,28 |
| 50 - 120 | € 2,393 | € 11,97 |
| 125 - 245 | € 2,156 | € 10,78 |
| 250+ | € 2,046 | € 10,23 |
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


