N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A

Номер на артикул на RS: 827-4833PМарка: Texas Instruments№ по каталога на производителя: CSD17307Q5A
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Width

5mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,565

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A
Изберете тип опаковка

€ 0,565

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Width

5mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more