N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3

Номер на артикул на RS: 914-2939Марка: Texas Instruments№ по каталога на производителя: CSD16406Q3
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Технически документи

Спецификации

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Информацията за складовите наличности временно не е налична.

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P.O.A.

N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
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10

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10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 10.

Производство -

Предлагат се на бройка по 10.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

10

Предлагат се на бройка по 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more