N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16342Q5A

Номер на артикул на RS: 827-4739Марка: Texas Instruments№ по каталога на производителя: CSD16342Q5A
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16342Q5A
Изберете тип опаковка

P.O.A.

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16342Q5A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

6.8 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Детайли за продукта

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more