P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Технически документи
Спецификации
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Length
2.9mm
Height
0.95mm
Forward Diode Voltage
1V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Length
2.9mm
Height
0.95mm
Forward Diode Voltage
1V