N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Технически документи
Спецификации
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,313
Each (In a Pack of 25) (ex VAT)
25
€ 0,313
Each (In a Pack of 25) (ex VAT)
25
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 50 | € 0,313 | € 7,84 |
75 - 125 | € 0,271 | € 6,78 |
150 - 475 | € 0,237 | € 5,94 |
500+ | € 0,215 | € 5,38 |
Технически документи
Спецификации
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V