STMicroelectronics MDmesh Type N-Channel MOSFET, 138 A, 650 V Enhancement, 3-Pin

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
138A
Maximum Drain Source Voltage Vds
650V
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
414nC
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.3 mm
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 1 060,75
€ 35,358 Each (In a Tube of 30) (ex VAT)
30
€ 1 060,75
€ 35,358 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
138A
Maximum Drain Source Voltage Vds
650V
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
414nC
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Width
5.3 mm
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта

