STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Детайли за продукта
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 35,78
€ 35,78 Всеки (ex VAT)
Стандарт
1
€ 35,78
€ 35,78 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 1 | € 35,78 |
2 - 4 | € 34,83 |
5 - 9 | € 33,94 |
10+ | € 33,09 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.3mm
Forward Diode Voltage
1.5V
Детайли за продукта