STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

Номер на артикул на RS: 168-7533Марка: STMicroelectronics№ по каталога на производителя: STW34NM60N
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 178,48

€ 5,949 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

€ 178,48

€ 5,949 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
30 - 60€ 5,949€ 178,48
90 - 480€ 4,932€ 147,97
510 - 960€ 4,355€ 130,65
990+€ 3,783€ 113,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Детайли за продукта

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more