Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Детайли за продукта
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 99,34
€ 3,311 Each (In a Tube of 30) (ex VAT)
30
€ 99,34
€ 3,311 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 60 | € 3,311 | € 99,34 |
| 90 - 480 | € 2,649 | € 79,47 |
| 510 - 960 | € 2,354 | € 70,63 |
| 990+ | € 1,994 | € 59,81 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Детайли за продукта


