STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247

Номер на артикул на RS: 103-1986Марка: STMicroelectronics№ по каталога на производителя: STW11NM80
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 72,87

€ 2,429 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247

€ 72,87

€ 2,429 Each (In a Tube of 30) (ex VAT)

STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
30 - 60€ 2,429€ 72,87
90 - 480€ 1,941€ 58,23
510 - 960€ 1,727€ 51,80
990 - 4980€ 1,54€ 46,20
5010+€ 1,503€ 45,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

43.6nC

Forward Voltage Vf

0.86V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more