Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Minimum Operating Temperature
-65 °C
Детайли за продукта
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 72,62
€ 2,421 Each (In a Tube of 30) (ex VAT)
30
€ 72,62
€ 2,421 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 60 | € 2,421 | € 72,62 |
| 90 - 480 | € 1,934 | € 58,03 |
| 510 - 960 | € 1,721 | € 51,62 |
| 990 - 4980 | € 1,535 | € 46,04 |
| 5010+ | € 1,498 | € 44,94 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Minimum Operating Temperature
-65 °C
Детайли за продукта


