Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Operating Temperature
150°C
Length
3.04mm
Standards/Approvals
No
Width
1.75 mm
Height
1.3mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 488,11
€ 0,163 Each (On a Reel of 3000) (ex VAT)
3000
€ 488,11
€ 0,163 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Package Type
SOT-23
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Operating Temperature
150°C
Length
3.04mm
Standards/Approvals
No
Width
1.75 mm
Height
1.3mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


