STMicroelectronics STripFET V Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Номер на артикул на RS: 165-6538Марка: STMicroelectronics№ по каталога на производителя: STR2N2VH5
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

STripFET V

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

350mW

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.75 mm

Height

1.3mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 1 020,91

€ 0,34 Each (On a Reel of 3000) (ex VAT)

STMicroelectronics STripFET V Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

€ 1 020,91

€ 0,34 Each (On a Reel of 3000) (ex VAT)

STMicroelectronics STripFET V Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

STripFET V

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

350mW

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.75 mm

Height

1.3mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more