Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Package Type
SOT-23
Series
STripFET V
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
8 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Forward Voltage Vf
1.1V
Maximum Operating Temperature
150°C
Width
1.75 mm
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 1 020,91
€ 0,34 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 020,91
€ 0,34 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Package Type
SOT-23
Series
STripFET V
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
8 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Forward Voltage Vf
1.1V
Maximum Operating Temperature
150°C
Width
1.75 mm
Height
1.3mm
Length
3.04mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


