STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-220

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 74,44
€ 1,489 Each (In a Tube of 50) (ex VAT)
50
€ 74,44
€ 1,489 Each (In a Tube of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
50
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 1,489 | € 74,44 |
| 100 - 450 | € 1,268 | € 63,42 |
| 500 - 950 | € 1,128 | € 56,38 |
| 1000 - 4950 | € 1,048 | € 52,40 |
| 5000+ | € 0,883 | € 44,14 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

