STMicroelectronics STripFET N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP80NF06

Номер на артикул на RS: 687-5324Марка: STMicroelectronics№ по каталога на производителя: STP80NF06
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

115 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

9.15mm

Minimum Operating Temperature

-65 °C

PRICED TO CLEAR

Yes

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

Запитване за цена

Each (In a Pack of 2) (ex VAT)

STMicroelectronics STripFET N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP80NF06
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 2) (ex VAT)

STMicroelectronics STripFET N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP80NF06

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

115 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

9.15mm

Minimum Operating Temperature

-65 °C

PRICED TO CLEAR

Yes

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more