STMicroelectronics STripFET H7 Type N-Channel Power MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 STP310N10F7

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 8,00
€ 3,999 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 8,00
€ 3,999 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 8 | € 3,999 | € 8,00 |
| 10 - 98 | € 3,414 | € 6,83 |
| 100 - 498 | € 3,008 | € 6,02 |
| 500+ | € 2,928 | € 5,86 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

