N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

Номер на артикул на RS: 192-4662Марка: STMicroelectronics№ по каталога на производителя: STP26N65DM2
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

25 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 2,907

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

€ 2,907

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 2,907€ 145,35
100 - 200€ 2,532€ 126,62
250 - 450€ 2,404€ 120,19
500 - 950€ 2,146€ 107,29
1000+€ 1,998€ 99,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

25 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more