N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 3,614
Each (In a Pack of 2) (ex VAT)
2
€ 3,614
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 8 | € 3,614 | € 7,23 |
10 - 18 | € 3,397 | € 6,80 |
20 - 48 | € 3,216 | € 6,43 |
50 - 98 | € 3,041 | € 6,08 |
100+ | € 2,895 | € 5,79 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China