N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6

Номер на артикул на RS: 192-4661Марка: STMicroelectronics№ по каталога на производителя: STP26N60DM6
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 2,317

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6

€ 2,317

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET Transistor, 15 A, 3-Pin TO-220 STMicroelectronics STP26N60DM6
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 2,317€ 115,87
100 - 200€ 2,254€ 112,72
250 - 450€ 2,195€ 109,74
500 - 950€ 2,139€ 106,94
1000+€ 2,085€ 104,26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

15 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more