STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 950 V, 3-Pin TO-220 STP15N95K5
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 144,90
€ 2,898 Each (In a Tube of 50) (ex VAT)
50
€ 144,90
€ 2,898 Each (In a Tube of 50) (ex VAT)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 2,898 | € 144,90 |
| 100 - 200 | € 2,318 | € 115,92 |
| 250+ | € 2,128 | € 106,42 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products