STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 800 V, 3-Pin TO-220 STP13N80K5

Номер на артикул на RS: 791-7807PМарка: STMicroelectronics№ по каталога на производителя: STP13N80K5
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

800 V

Series

MDmesh K5, SuperMESH5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Детайли за продукта

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 13,38

€ 2,677 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 800 V, 3-Pin TO-220 STP13N80K5
Изберете тип опаковка

€ 13,38

€ 2,677 Each (Supplied in a Tube) (ex VAT)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 800 V, 3-Pin TO-220 STP13N80K5
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

800 V

Series

MDmesh K5, SuperMESH5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Детайли за продукта

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more