STMicroelectronics Type N-Channel MOSFET, 9 A, 800 V Enhancement, 3-Pin TO-220

Номер на артикул на RS: 168-6692Марка: STMicroelectronics№ по каталога на производителя: STP10NK80ZFP
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Length

10.4mm

Height

9.3mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 97,39

€ 1,948 Each (In a Tube of 50) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 9 A, 800 V Enhancement, 3-Pin TO-220

€ 97,39

€ 1,948 Each (In a Tube of 50) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 9 A, 800 V Enhancement, 3-Pin TO-220

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
50 - 50€ 1,948€ 97,39
100 - 450€ 1,555€ 77,74
500 - 950€ 1,385€ 69,26
1000 - 4950€ 1,171€ 58,55
5000+€ 1,121€ 56,03

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

4.6 mm

Length

10.4mm

Height

9.3mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more