N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP10NK60ZFP

Номер на артикул на RS: 485-7428Марка: STMicroelectronics№ по каталога на производителя: STP10NK60ZFP
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Length

10.4mm

Minimum Operating Temperature

-55 °C

Height

9.3mm

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 2,643

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP10NK60ZFP
Изберете тип опаковка

€ 2,643

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP10NK60ZFP
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 5€ 2,643€ 13,22
10 - 95€ 2,243€ 11,22
100 - 495€ 1,747€ 8,74
500 - 995€ 1,483€ 7,42
1000+€ 1,235€ 6,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

50 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Length

10.4mm

Minimum Operating Temperature

-55 °C

Height

9.3mm

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more