Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Operating Temperature
175°C
Length
6.7mm
Standards/Approvals
No
Width
3.7 mm
Height
1.8mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 7,20
€ 0,36 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
20
€ 7,20
€ 0,36 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
20
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-223
Series
STripFET
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Maximum Operating Temperature
175°C
Length
6.7mm
Standards/Approvals
No
Width
3.7 mm
Height
1.8mm
Automotive Standard
No
Страна на произход
China
Детайли за продукта
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


