Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1,58
€ 0,158 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
€ 1,58
€ 0,158 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта