Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 9,92
€ 0,992 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 9,92
€ 0,992 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 10 | € 0,992 | € 9,92 |
| 20+ | € 0,943 | € 9,43 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


