N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL90N6F7
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 14,23
€ 1,423 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 14,23
€ 1,423 Each (In a Pack of 10) (ex VAT)
Стандарт
10
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 40 | € 1,423 | € 14,23 |
| 50 - 90 | € 1,353 | € 13,53 |
| 100 - 240 | € 1,219 | € 12,19 |
| 250 - 490 | € 1,094 | € 10,94 |
| 500+ | € 1,041 | € 10,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products