STMicroelectronics STripFET H7 Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin PowerFLAT

Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
16.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 17,93
€ 0,717 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
25
€ 17,93
€ 0,717 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
25
| количество | Единична цена | Per Ролка |
|---|---|---|
| 25 - 45 | € 0,717 | € 3,59 |
| 50 - 120 | € 0,667 | € 3,33 |
| 125 - 245 | € 0,651 | € 3,25 |
| 250+ | € 0,635 | € 3,17 |
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
16.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

