Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
P.O.A.
Each (Supplied as a Tape) (ex VAT)
Стандарт
5
P.O.A.
Each (Supplied as a Tape) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта