Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
75W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
5.4 mm
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 1 710,60
€ 0,57 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 710,60
€ 0,57 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
75W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
5.4 mm
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Automotive Standard
No
Страна на произход
China
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


