STMicroelectronics N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Страна на произход
China
€ 29,05
€ 5,81 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 29,05
€ 5,81 Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 20 | € 5,81 | € 29,05 |
| 25 - 45 | € 5,462 | € 27,31 |
| 50 - 120 | € 5,171 | € 25,86 |
| 125 - 245 | € 4,876 | € 24,38 |
| 250+ | € 4,655 | € 23,28 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
0.9mm
Страна на произход
China

