N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STMicroelectronics STL140N4F7AG
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT
Series
STripFET F7
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Package Type
PowerFLAT
Series
STripFET F7
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.