N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STMicroelectronics STH3N150-2
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Детайли за продукта
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 5,149
Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 5,149
Each (In a Pack of 2) (ex VAT)
Стандарт
2
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 8 | € 5,149 | € 10,30 |
| 10 - 18 | € 4,836 | € 9,67 |
| 20 - 48 | € 4,582 | € 9,16 |
| 50 - 98 | € 4,323 | € 8,65 |
| 100+ | € 4,118 | € 8,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Детайли за продукта
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products