STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Номер на артикул на RS: 719-651Марка: STMicroelectronics№ по каталога на производителя: STH345N6F7-2
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Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Страна на произход

China

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 2 600,13

€ 2,60 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

1000

Предлагат се на бройка по 1000
1000€ 2 600,13
2000€ 5 200,26
3000€ 7 800,39
4000€ 10 400,52
5000€ 13 000,65
6000€ 15 600,78
7000€ 18 200,91
8000€ 20 801,04
9000€ 23 401,17
10000€ 26 001,30
11000€ 28 601,43
12000€ 31 201,56
13000€ 33 801,69
14000€ 36 401,82
15000€ 39 001,95

€ 2 600,13

€ 2,60 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

Информацията за складовите наличности временно не е налична.

1000

Предлагат се на бройка по 1000
1000€ 2 600,13
2000€ 5 200,26
3000€ 7 800,39
4000€ 10 400,52
5000€ 13 000,65
6000€ 15 600,78
7000€ 18 200,91
8000€ 20 801,04
9000€ 23 401,17
10000€ 26 001,30
11000€ 28 601,43
12000€ 31 201,56
13000€ 33 801,69
14000€ 36 401,82
15000€ 39 001,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

9.3mm

Height

4.7mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more