STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK-2 STH310N10F7-2

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
STripFET H7
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Информацията за складовите наличности временно не е налична.
€ 7,46
€ 3,728 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
2
€ 7,46
€ 3,728 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
2
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
STripFET H7
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

