STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Номер на артикул на RS: 234-8895Марка: STMicroelectronics№ по каталога на производителя: STH200N10WF7-2
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 3 716,26

€ 3,716 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

1000

Предлагат се на бройка по 1000
1000€ 3 716,26
2000€ 7 432,51
3000€ 11 148,77
4000€ 14 865,02
5000€ 18 581,28
6000€ 22 297,54
7000€ 26 013,79
8000€ 29 730,05
9000€ 33 446,30
10000€ 37 162,56
11000€ 40 878,82
12000€ 44 595,07
13000€ 48 311,33
14000€ 52 027,59
15000€ 55 743,84

€ 3 716,26

€ 3,716 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2

Информацията за складовите наличности временно не е налична.

1000

Предлагат се на бройка по 1000
1000€ 3 716,26
2000€ 7 432,51
3000€ 11 148,77
4000€ 14 865,02
5000€ 18 581,28
6000€ 22 297,54
7000€ 26 013,79
8000€ 29 730,05
9000€ 33 446,30
10000€ 37 162,56
11000€ 40 878,82
12000€ 44 595,07
13000€ 48 311,33
14000€ 52 027,59
15000€ 55 743,84

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH200

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

340W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more