STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Номер на артикул на RS: 860-7523Марка: STMicroelectronics№ по каталога на производителя: STH150N10F7-2
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Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 6,88

€ 3,439 Each (In a Pack of 2) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2
Изберете тип опаковка

€ 6,88

€ 3,439 Each (In a Pack of 2) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

количествоЕдинична ценаPer Опаковка
2 - 8€ 3,439€ 6,88
10 - 18€ 3,266€ 6,53
20 - 48€ 2,943€ 5,89
50 - 98€ 2,649€ 5,30
100+€ 2,522€ 5,04

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more