STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

Номер на артикул на RS: 168-8819Марка: STMicroelectronics№ по каталога на производителя: STH150N10F7-2
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Преглед на всички в MOSFETs

Информацията за складовите наличности временно не е налична.

€ 1 900,14

€ 1,90 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

1000

Предлагат се на бройка по 1000
1000€ 1 900,14
2000€ 3 800,27
3000€ 5 700,41
4000€ 7 600,54
5000€ 9 500,68
6000€ 11 400,82
7000€ 13 300,95
8000€ 15 201,09
9000€ 17 101,22
10000€ 19 001,36
11000€ 20 901,49
12000€ 22 801,63
13000€ 24 701,77
14000€ 26 601,90
15000€ 28 502,04

€ 1 900,14

€ 1,90 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

Информацията за складовите наличности временно не е налична.

1000

Предлагат се на бройка по 1000
1000€ 1 900,14
2000€ 3 800,27
3000€ 5 700,41
4000€ 7 600,54
5000€ 9 500,68
6000€ 11 400,82
7000€ 13 300,95
8000€ 15 201,09
9000€ 17 101,22
10000€ 19 001,36
11000€ 20 901,49
12000€ 22 801,63
13000€ 24 701,77
14000€ 26 601,90
15000€ 28 502,04

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

10.57 mm

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Страна на произход

China

Детайли за продукта

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more