STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2

Brand

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Maximum Gate Source Voltage Vgs

-20, +20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

4.8mm

Length

10.4mm

Standards/Approvals

No

Width

10.57mm

Automotive Standard

No