STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
469 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
€ 27,94
€ 5,59 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
€ 27,94
€ 5,59 Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
5
| количество | Единична цена |
|---|---|
| 5 - 9 | € 5,59 |
| 10 - 24 | € 5,03 |
| 25 - 49 | € 4,53 |
| 50+ | € 4,30 |
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
469 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

