STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Страна на произход
Korea, Republic Of
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
€ 87,22
€ 2,907 Each (In a Tube of 30) (ex VAT)
30
€ 87,22
€ 2,907 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 30 | € 2,907 | € 87,22 |
| 60 - 120 | € 2,831 | € 84,94 |
| 150+ | € 2,762 | € 82,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
HB
Automotive Standard
No
Страна на произход
Korea, Republic Of
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products