STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A @ +25°C
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Number of Transistors
1
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
1952pF
Maximum Operating Temperature
+175 °C
Energy Rating
553mJ
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
30
P.O.A.
30
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A @ +25°C
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Number of Transistors
1
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
1952pF
Maximum Operating Temperature
+175 °C
Energy Rating
553mJ