STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole

Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
119 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
576 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Страна на произход
China
P.O.A.
Производствен пакет (Тръба)
1
P.O.A.
Производствен пакет (Тръба)
1
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Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
119 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
576 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Страна на произход
China