Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Информацията за складовите наличности временно не е налична.
€ 5,29
€ 5,29 Всеки (ex VAT)
Стандарт
1
€ 5,29
€ 5,29 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
| количество | Единична цена |
|---|---|
| 1 - 9 | € 5,29 |
| 10 - 99 | € 4,30 |
| 100 - 599 | € 4,24 |
| 600 - 1199 | € 4,20 |
| 1200+ | € 4,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Детайли за продукта
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
