STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 43,20
€ 4,32 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 43,20
€ 4,32 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 10 - 20 | € 4,32 | € 21,60 |
| 25 - 45 | € 3,89 | € 19,45 |
| 50+ | € 3,866 | € 19,33 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products