STMicroelectronics STGW20NC60VD, Type N-Channel IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
54A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Series
SMPS
Automotive Standard
No
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
€ 3,27
€ 3,27 Всеки (ex VAT)
Стандарт
1
€ 3,27
€ 3,27 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
| количество | Единична цена |
|---|---|
| 1 - 9 | € 3,27 |
| 10 - 99 | € 3,06 |
| 100 - 499 | € 2,97 |
| 500 - 999 | € 2,89 |
| 1000+ | € 2,82 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
54A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
JEDEC
Series
SMPS
Automotive Standard
No
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products