STMicroelectronics STGP7NC60HD IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1,216
Each (In a Tube of 50) (ex VAT)
50
€ 1,216
Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 1,216 | € 60,81 |
100 - 450 | € 0,918 | € 45,90 |
500 - 950 | € 0,774 | € 38,71 |
1000 - 4950 | € 0,656 | € 32,80 |
5000+ | € 0,64 | € 31,99 |
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Детайли за продукта
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.